What Is NAND Flash? Non-Volatile Memory Glossary
What Is NAND Flash? Non-Volatile Memory Glossary
NAND Flash is a type of non-volatile storage memory that retains data without power. It was invented by Dr. Fujio Masuoka at Toshiba in 1987 and named for its logic-gate structure (NOT-AND). Unlike NOR Flash, which allows random byte access, NAND Flash uses a series-connected cell architecture that must be accessed in pages (typically 4 KB–16 KB) and erased in larger blocks (typically 256 KB–4 MB). This trade-off delivers significantly higher density, faster write/erase speeds, and lower cost per bit — making NAND Flash the dominant storage medium for SSDs, eMMC, UFS, SD cards, and USB drives in both consumer and industrial applications.
In the memory-storage hierarchy, NAND Flash occupies the critical layer between volatile DRAM (fast, expensive) and mechanical HDDs (slow, cheap), enabling persistent storage with near-DRAM performance in modern systems. Its key characteristics include:
- Non-volatile: Data is retained for years without power
- Page/block access: Read and write at page granularity; erase at block granularity
- Asymmetric operations: Reads are fast (~25–100 µs), writes are slower (~200–2,500 µs)
- Finite endurance: Each erase-write cycle wears out the oxide layer
- Needs management: Requires a controller or FTL for wear leveling, bad block management, and ECC
NAND Flash Types: SLC, MLC, TLC, QLC
NAND Flash cells are classified by the number of bits stored per cell. Higher bit-per-cell counts increase density and lower cost but reduce performance, endurance, and reliability — critical factors for industrial storage selection.
| Feature | SLC | MLC | TLC | QLC |
|---|---|---|---|---|
| Bits per cell | 1 | 2 | 3 | 4 |
| P/E cycles | ~100,000 | ~3,000–10,000 | ~500–3,000 | ~100–1,000 |
| Read latency | ~25 µs | ~50 µs | ~75 µs | ~100+ µs |
| Write latency | 200–300 µs | 600–900 µs | 900–1,500 µs | 1,500–2,500 µs |
| Cost per GB | Highest | High | Medium | Lowest |
| Typical use | Industrial, military SSD | Enterprise SSD | Consumer SSD | Cold archive |
Related Terms
| Term | Description |
|---|---|
| NOR Flash | Non-volatile memory with random byte access, faster reads, lower density. Used for firmware/boot where XIP is needed. |
| FTL (Flash Translation Layer) | Firmware that maps logical addresses to physical NAND pages; handles GC, wear leveling, bad block remapping. |
| Wear Leveling | FTL algorithm distributing P/E cycles evenly across blocks to maximize lifespan. |
| ECC | Error Correction Codes (BCH, LDPC) that detect and fix bit errors from read/program disturb and data retention loss. |
| 3D NAND | NAND with vertically stacked memory cells (64L–232L+), the dominant technology since ~2016. |
| pSLC | MLC/TLC NAND run in 1-bit-per-cell mode, trading capacity for 10–100× better endurance. |
By Loongtion Technical Team
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