Loongtion

Industrial DDR chips for OEM boards that see weather, heat, and long life

For hardware and component engineers at industrial / embedded OEMs — solder-down DDR3, DDR4, DDR5, and LPDDR4X with Industrial WT (−40~85°C) and Ext (−55~105°C) grades, all China-localized (CN). Free datasheet, remote fit review, low MOQ.

  • CNChina-localized
  • −40~85°CIndustrial WT
  • −55~125°CDDR3 GJB Ext
  • GJB-STDgrade on select Ext SKUs

CN = China-localized supply for domestic-label programs. GJB-STD is a product grade — reliability tier and documentation, not a military end-use claim. Read the product grade definition

If you own the BOM, this will sound familiar

  • Consumer or “industrial-labeled” DRAM that still fails cold boot or sealed-cabinet heat.
  • A long-life platform stuck on DDR3 / DDR4 with shrinking supply and no pin-compatible path.
  • Quotes without a firm window — or a broker who cannot own footprint, temp grade, or incumbent PN match.
  1. 1
    Inquire free Datasheet PDF + quotation on your email thread.
  2. 2
    Confirm fit Remote BOM / drawing review before you buy samples.
  3. 3
    Sample, then scale Low MOQ when stocked; bulk typically 4–8 weeks.

Four DRAM lines

Solder-down memory chips only — eMMC and NVMe BGA are separate campaigns for different buyers. Each line below is China-localized (CN); free datasheet PDF on each card.

DDR3 DRAM Chip · Extreme · CN
DDR3 CN GJB-STD

Industrial DDR3 DRAM Chip

Keep long-lifecycle controllers and maintenance boards on DDR3 — CN supply without hunting broker stock.

2–8Gb · FBGA96 ×16 · JEDEC DDR3 · China-localized (CN)

Ind WT −40~85°C · GJB Ext −55~125°C

8Gb DDR4 DRAM Chip · Wide-temp · CN
DDR4 CN

Industrial 8Gb DDR4 DRAM Chip

Solder-down CN DDR4 for outdoor cabinets, edge gateways, and transport electronics.

8Gb / 1GB per chip · ×8 / ×16 · up to 3200 MT/s · China-localized (CN)

Ind WT −40~85°C

Industrial 16Gb DDR5 DRAM Chip
DDR5 CN

Industrial 16Gb DDR5 DRAM Chip

Next-platform embedded DRAM with on-die ECC, industrial screening, and CN supply.

16Gb / 2GB per chip · WBGA-82 · up to 6400 MT/s · China-localized (CN)

Ind WT −40~85°C

LPDDR4X DRAM Chip
LPDDR4X CN

Industrial LPDDR4X DRAM Chip

Low-power SoC designs — handheld terminals, compact edge, battery-aware boards with CN labeling.

2–8GB · 200-ball FBGA · 3733 / 4266 MT/s · China-localized (CN)

Ind WT −40~85°C

Cross-reference incumbent PNs

Documented vendor → Loongtion mappings for BOM shortlisting. Always validate package, speed bin / firmware, and temperature grade on your host.

Micron MT41K128M16JT-125IT:K
→ YZ38E16SBB-9MFB-M(O) / YZ38E16SBB-9MFB-M · Pin-to-Pin Compatible
Details →
Micron MT41K256M16HA-125IT
→ YZ38F16SBB-9MFD-M(O) / YZ38F16SBB-9MFD-M · Pin-to-Pin Compatible
Details →
ChangXin (CXMT) CXD2A8G8MA
→ YZ38G16SDB-9INN-M(0) (8Gb ×16 FBGA96) · Cross-Reference
Details →
Samsung K4B4G1646Q-HYK0
→ YZ38F16SBB-9MFD-M(O) / YZ38F16SBB-9MFD-M · Functional Alternative
Details →
ISSI IS43TR16256BL-125KBLI
→ YZ38F16SBB-9MFD-M(O) / YZ38F16SBB-9MFD-M · Functional Alternative
Details →
SK hynix H5TQ4G63CFR-RDC
→ YZ38F16SBB-9MFD-M(O) / YZ38F16SBB-9MFD-M · Functional Alternative
Details →
Samsung K4B8G1646D-MCNB
→ YZ38G16SDB-9INN-M(0) (8Gb ×16 FBGA96) · Functional Alternative
Details →
SK hynix H5TQ8G63CFR
→ YZ38G16SDB-9INN-M(0) (8Gb ×16 FBGA96) · Functional Alternative
Details →
Micron MT41K512M16HA-125:IT
→ YZ38G16SDB-9INN-M(0) (8Gb ×16 FBGA96) · Functional Alternative
Details →
Micron MT40A1G8WE-075EAIT:B
→ YZ48G08V-F7HPI-M(O) / YZ48G08V-F7HPI-M · Pin-to-Pin Compatible
Details →
Micron MT40A512M16JY-07EAIT:B
→ YZ48G16V-F9HPI-M(O) / YZ48G16V-F9HPI-M · Pin-to-Pin Compatible
Details →
Samsung K4A8G165WC-BCWE
→ YZ48G16V-F9HPI-M(O) / YZ48G16V-F9HPI-M · Pin-to-Pin Compatible
Details →
Samsung K4A8G165WB
→ YZ48G16V-F9HPI-M(O) / YZ48G16V-F9HPI-M · Pin-to-Pin Compatible
Details →
ChangXin (CXMT) CXDQ3BFAM-WQ:A
→ YZ48G08V-F7HPI-M(O) · Cross-Reference
Details →
Micron MT60B2G8HB-48B:A
→ YZ5GG16W-9CXDQ-M(O) · Functional Alternative
Details →
Micron MT60B2G8HB* / MT62F1G32D4DS* (16Gb DDR5 family)
→ YZ5GG16W-9CXDQ-M(O) · Possible Alternative — Verify
Details →
Samsung K3KL8L80CM-MGCP
→ YZ5GG16W-9CXDQ-M(O) · Functional Alternative
Details →
Samsung K3KL8L80CM* / K3LK6K60* (DDR5 monolithic family)
→ YZ5GG16W-9CXDQ-M(O) · Possible Alternative — Verify
Details →
SK hynix H5CGD8AG8DX018
→ YZ5GG16W-9CXDQ-M(O) · Functional Alternative
Details →
SK hynix HMCG94MEB* / H5CGD8AG8* (DDR5 embedded family)
→ YZ5GG16W-9CXDQ-M(O) · Possible Alternative — Verify
Details →
Samsung K3LK6K6 / K3LKBKB (LPDDR4X 200-ball)
→ YZDB5CCBM-EA-A / YZDB6CCBM-EA-A / YZDB7CCDM-EA-A · Functional Alternative
Details →
SK hynix H9HCNNNB*
→ YZDB5CCBM-EA-A / YZDB6CCBM-EA-A / YZDB7CCDM-EA-A · Possible Alternative — Verify
Details →
Samsung K4U6E3S4AM-MGC1
→ YZDB5CCBM-EA-A / YZDB6CCBM-EA-A / YZDB7CCDM-EA-A · Functional Alternative
Details →
Micron MT53E1G32D2FW-046
→ YZDB5CCBM-EA-A / YZDB6CCBM-EA-A / YZDB7CCDM-EA-A · Functional Alternative
Details →
Winbond W957A6MB
→ YZDB5CCBM-EA-A / YZDB6CCBM-EA-A / YZDB7CCDM-EA-A · Possible Alternative — Verify
Details →
Samsung K3LKBKB* / K3LK6K6* (LPDDR4X 200-ball family)
→ YZDB5CCBM-EA-A / YZDB6CCBM-EA-A / YZDB7CCDM-EA-A · Possible Alternative — Verify
Details →
Micron MT53E* / MT53D* (LPDDR4X family)
→ YZDB5CCBM-EA-A / YZDB6CCBM-EA-A / YZDB7CCDM-EA-A · Possible Alternative — Verify
Details →
SK hynix H9HCNNNB* (LPDDR family — verify voltage)
→ YZDB5CCBM-EA-A / YZDB6CCBM-EA-A / YZDB7CCDM-EA-A · Possible Alternative — Verify
Details →

Browse the full cross-reference catalog · Ask engineering for a BOM match

Compliance & Standards

Quality and release processes for Loongtion industrial memory and storage. Formal certificates and scope statements are available in the quotation pack on request.

Quality management system

  • ISO 9001:2015 certified (GB/T 19001-2016) Quality management systems — Requirements. Certified quality system covering semiconductor integrated circuits and solid-state storage modules (design, development, production, and technical support) and hybrid integrated circuits (design, development, and technical support).
  • Conforms to GJB 9001C—2017 Quality management systems — Requirements. Quality system practices conform to GJB 9001C for the same scope: semiconductor integrated circuits and solid-state storage modules (design, development, production, and technical support) and hybrid integrated circuits (design, development, and technical support).

Environmental methods (GJB-STD)

For Extreme-temp / GJB-STD SKUs, environmental planning and screening reference the following methods. This is not a claim of third-party product certification under these standards.

  • GJB 150A (aligned with MIL-STD-810 methods) Military equipment laboratory environmental test methods. GJB-STD SKUs are designed and screened with reference to GJB 150A; it is the Chinese military counterpart commonly mapped to MIL-STD-810 style environmental methods.

Product & interface standards

Catalog SKUs follow the industry specifications that define their form factor and host interface.

  • JEDEC DRAM specifications DDR3 / DDR4 / DDR5 / LPDDR families follow applicable JEDEC device and signaling specifications for the listed density, organization, and speed bin.
  • JEDEC DDR SDRAM DDR3 / DDR4 / DDR5 devices follow applicable JEDEC DDR specifications for the listed density, organization, and speed bin.
  • JEDEC LPDDR Low-power DRAM devices follow applicable JEDEC LPDDR specifications for the listed density and speed bin.

Grade wording for Wide-temp vs Extreme-temp / GJB-STD: Product grade definition.

What this program is built for

  • Built for the boards you ship IPC, outdoor cabinets, energy, transport, and factory edge — solder-down DRAM with real enclosure grades, not desktop bins.
  • China-localized (CN) across the line These four DRAM chips carry the CN badge — domestic supply path for programs that need China-localized labeling, not import-only catalogs.
  • Industrial WT and Ext grades −40~85°C (Ind WT) across the DRAM line; DDR3 GJB Ext is −55~125°C per handbook. Select Ext SKUs use our GJB-STD grade definition.
  • One DRAM team, pilot-friendly MOQ DDR3 / DDR4 / DDR5 / LPDDR4X under one engineering owner. From 1 pc when stocked — prove fit before bulk.

Need the formal wording for GJB-STD? Product grade definition

Who ships this

Loongtion is a China-based industrial memory manufacturer — design and screening in Xi’an, shipment from Ningbo. China-localized (CN) DRAM lines for OEM pilots and production; not a trading desk.

What you receive

  • PDF datasheet for the line you select
  • Commercial quotation (grade, qty, destination)
  • Free BOM & drawing review on request

No public price list. Sample and bulk terms quoted per line. Qualified bulk programs may include a 5-year free replacement policy — ask on your quote thread.

FAQ

Who is this page for?

Hardware and component engineers at industrial / embedded OEMs — teams selecting solder-down DDR for outdoor, sealed, transport, energy, or long-lifecycle platforms. It is not a consumer PC memory page.

What does the CN badge mean?

CN means China-localized supply on that SKU — domestic labeling for programs that require a China-localized BOM path. On this campaign, DDR3 / DDR4 / DDR5 / LPDDR4X lines are CN.

What does GJB-STD mean here?

GJB-STD is a product grade label on selected Ext-temperature SKUs: reliability tier, documentation, and screening as defined on our product grade page. It does not mean the parts are marketed for military end-use.

Do you publish a price list?

No. We quote by grade, quantity, and destination so lead time and commercial terms stay accurate.

Can you help if I only have an incumbent PN?

Yes — send the PN or BOM. We recommend a Loongtion match and note footprint / temp grade differences.

What about eMMC or NVMe BGA?

Those serve different buyers and live on separate pages. This campaign covers solder-down DRAM chips only.

How fast do you reply?

Usually within one business day on China business days (Mon–Fri, UTC+8; excl. public holidays) — datasheet and quote on the same thread.