Industrial M.2 NVMe DRAM Cache SSD Guide

• JEDEC Compliant
• Industrial Temp
• −40°C to 85°C
• 1-8TB

Ningbo Loongtion Intelligent Technology Co., Ltd.

hi@loongtion.com | www.loongtion.com

Document Version 2.2 | June 2026

1. Executive Summary

The Loongtion M.2 2280 NVMe SSD with DRAM Cache is an industrial‑grade solid‑state drive designed for embedded, industrial, medical, and commercial computing applications. Built around a China‑domestic controller and Triple‑Level Cell (TLC) NAND flash, the drive complies with the NVMe 1.4 protocol and operates over a PCIe 3.0 x4 interface via a standard M.2 M‑Key connector.

Available in capacities from 1 TB to 8 TB, the drive delivers sequential read speeds of ≥2900 MB/s and sequential write speeds of ≥2600 MB/s (8 TB capacity, measured with CrystalDiskMark on Windows). Endurance is rated at up to 3200 TBW (8 TB) with 3000 P/E cycles, backed by a 5‑year warranty. The industrial‑grade variant supports an operating temperature range of –40 °C to +85 °C and a storage temperature range of –45 °C to +90 °C.

An onboard DRAM cache (approximately 1 GB per 1 TB of SSD capacity, sourced from Micron or ChangXin Memory Technologies (CXMT) depending on production batch) is included. The drive also supports TRIM, NCQ, S.M.A.R.T., ECC, wear leveling, and software‑triggered secure erase.

This whitepaper provides a detailed technical description, including architecture, electrical specifications, performance data, reliability metrics, system integration guidance, and ordering information. All data are derived from the Loongtion consolidated technical fact sheet (Revision V1.1, 2024.02.01). Specifications are subject to change; users should always refer to the latest official datasheet for complete and current information.

2. Product Overview

The Loongtion M.2 2280 NVMe SSD (DRAM Cache) is a solid‑state drive in the M.2 2280 form factor (22 mm × 80 mm, height ≤5 mm, weight <20 g). It connects to the host system through a standard M.2 M‑Key 75‑pin gold‑finger connector with 3 μin gold plating. The interface implements NVMe 1.4 over a PCIe 3.0 x4 bus.

Capacity Options

Note: Tolerance between nominal and usable capacity: ±10 %.

Key Attributes

• Grade: Industrial (I)
• Controller: China‑domestic (specific model not specified in source documentation)
• NAND Flash: TLC (Triple‑Level Cell), 3000 P/E cycles
• DRAM Cache: Onboard, ~1 GB per 1 TB of SSD capacity; suppliers: Micron or CXMT depending on production batch
• Supported Features: TRIM, NCQ, S.M.A.R.T., ECC, wear leveling, software‑triggered secure erase (via pin 67), high‑reliability power management with short‑circuit and undervoltage protection
• Warranty: 5 years

Part Numbers (Industrial Grade)

Note: The 2026 product handbook publishes M.2 2280 NVMe under DRAM-less codes (YIDJ*NXT/NZT). Onboard DRAM-cache SKUs are quoted per program — do not use unpublished NQT codes.

3. Technology and Architecture

Controller and Data Path

The drive employs a China‑domestic controller (specific model not disclosed in the source documentation) that manages all host‑side NVMe protocol parsing, data verification, and NAND flash array management. Data flow follows this sequence:

1. The host communicates via the M.2 M‑Key connector.
2. The controller parses NVMe commands and validates data on the link.
3. Valid data is then distributed across the TLC NAND flash array, which is organized as a multi‑channel array (exact channel count not specified in source documentation).

NAND Flash

The NAND flash uses Triple‑Level Cell (TLC) technology, rated for 3000 program/erase (P/E) cycles. Wear leveling is supported to extend the useful life of the NAND array across all P/E cycles.

Onboard DRAM Cache

An onboard DRAM cache (approximately 1 GB per 1 TB of SSD capacity) is populated using memory from either Micron or ChangXin Memory Technologies (CXMT), depending on production batch.

Error Correction and Monitoring

• ECC: Supported (specific algorithm not specified in source documentation).
• S.M.A.R.T.: Supported for self‑monitoring, analysis, and reporting.
• NCQ (Native Command Queuing): Supported.

Power Management

The drive includes high‑reliability power management circuitry with short‑circuit and undervoltage protection. Power consumption varies by capacity and workload (see Section 5 for detailed values). Sleep power is consistent at 0.4 W across all capacities.

Internal Block Diagram

A block diagram is referenced as Figure 1 in the source documentation but is not reproduced in this whitepaper.

4. Key Features and Differentiators

• Industrial‑Grade Reliability: Operating temperature range –40 °C to +85 °C; storage temperature –45 °C to +90 °C; 5‑year warranty; up to 3200 TBW (8 TB).
• Onboard DRAM Cache: Provides the performance benefits typical of DRAM‑based NVMe SSDs.
• China‑Domestic Supply Chain: The controller and DRAM cache (when sourced from CXMT) are domestic; TLC NAND with 3000 P/E cycles.
• High Sequential Performance: Up to ≥2900 MB/s read, ≥2600 MB/s write (8 TB) over PCIe 3.0 x4.
• Wide Capacity Range: 1 TB to 8 TB in a single M.2 2280 module.
• Software‑Triggered Secure Erase: Dedicated pin (pin 67) enables secure erase commands.
• Power Management: Consistent 0.4 W sleep power; short‑circuit and undervoltage protection.
• Standard Compliance: NVMe 1.4, PCIe 3.0, M.2 M‑Key mechanical/electrical.
• Quality Packaging: Anti‑static bags, clean/dry packaging, certificate of conformance included.

5. Technical Specifications

Physical Specifications

Power Supply

Power Consumption (Maximum Values, Reference Only)

Important: Power consumption data are for reference only. Actual values may vary by system configuration and workload.

Temperature Ranges

Endurance

Note: TBW tolerance is ±10 %.

Interface Pinout Summary (Power and Ground)

PCIe Interface Pins

Note: Multiple pins are marked “No connection” (NC) or “Reserved” – see full pinout in the datasheet.

6. Performance and Reliability

Sequential Transfer Speeds (CrystalDiskMark, Windows)

Note: Values are minimums (≥) verified with CrystalDiskMark on Windows. Actual performance may vary depending on system configuration, workload, and test environment.

Random Performance

• Not specified in source documentation.

Latency

• Not specified in source documentation.

Reliability and Endurance

• TBW per capacity: See Section 5.
• P/E cycles: 3000 (TLC NAND).
• Warranty: 5 years.
• MTBF: Not specified in source documentation.
• Data retention: Not specified.
• Shock/vibration resistance: Not specified.
• Features supporting reliability: ECC, wear leveling, S.M.A.R.T. monitoring, high‑reliability power management with short‑circuit and undervoltage protection.

Environmental Restrictions

• Do not store together with acids, alkalis, or corrosive substances.
• Transportation: ordinary vehicles, protect from rain and snow, handle with care.
• Storage area: temperature 0 °C to 35 °C, relative humidity ≤80 %, free from strong magnetic fields.

Quality Inspection

• Appearance: Housing surface free from burrs, deformation, contamination, corrosion; coating uniform; markings clear and legible.
• Electrical performance: SMART information check, file system data read/write test, normal temperature electrical performance test.
• Each drive is shipped with a test report and certificate of conformance.

7. Applications and Target Markets

The Loongtion M.2 2280 NVMe SSD (DRAM Cache) is designed for systems that require high‑performance NVMe storage in challenging environments. Target application domains include:

• Embedded Devices and Systems: Industrial PCs, edge computing platforms, embedded controllers.
• Industrial Equipment: Factory automation, CNC machines, surveillance DVRs, test and measurement equipment.
• Medical Equipment: Patient monitors, diagnostic imaging systems, portable medical devices (operating temperature –40 °C to +85 °C).
• Commercial Computers: Thin clients, workstations, servers requiring NVMe performance and reliability.

The drive is particularly suited for boot drives and data storage in systems with NVMe support where a wide temperature range, high endurance, and an onboard DRAM cache are required.

8. System Integration and Design Considerations

System Requirements

• The host hardware must support the NVMe protocol and provide an M.2 M‑Key slot with PCIe x4 lanes.
• The operating system must have NVMe driver support.

Power Supply Design

• The SSD requires a +3.3 V supply within the range 3.15 V – 3.45 V with ripple ≤50 mV p‑p.
• Multiple power pins (nine total) distribute current; ensure adequate decoupling on the host board.
• Sleep power is consistent at 0.4 W across all capacities; idle and active power scale with capacity.
• The power management subsystem includes short‑circuit and undervoltage protection – ensure the host power supply can handle peak current events.

Thermal Management

• Maximum power dissipation reaches 8.8 W (8 TB capacity under sequential write). The system thermal design should accommodate this, especially for sustained write operations. Use of heatsinks or forced airflow is recommended for high‑capacity, high‑write applications.
• The drive claims effective thermal dissipation; specific thermal throttling implementation details are not provided in the source documentation.

Signal Integrity

• PCIe differential pairs (PETn/p, PERn/p) require controlled‑impedance routing on the host PCB.
• The reference clock (REFCLK_N, REFCLK_P) must be provided on pins 53 and 55 with PCIe‑standard frequency.
• Reset (PERST#) and clock request (CLKREQ#) are active‑low signals and must be driven by the host.
• The software‑triggered secure erase pin (pin 67) can be employed for secure erase commands.

Mechanical Integration

• The M.2 2280 module measures 80 mm × 22 mm with a height ≤5 mm; ensure adequate clearance in the enclosure.
• Weight <20 g; no special mounting support needed.
• Connector gold plating is 3 μin; consider mating cycle limits for designs requiring frequent insertion/removal.

Storage and Handling

• Store at 0 °C to 35 °C, relative humidity ≤80 %, away from strong magnetic fields and corrosive substances.
• Product is shipped in anti‑static bags with foam, certificate of conformance, and test reports.
• Do not stack heavy objects on the product; handle with care during installation.

Notes on Unspecified Parameters

• Power loss protection (PLP) details are not provided; consult the latest datasheet for any capacitor‑based backup.
• Thermal throttling method is not described; it is advisable to monitor drive temperature via S.M.A.R.T. attributes.
• Over‑provisioning configuration is not specified.
• Encryption support (AES, TCG Opal) is not confirmed in the source documentation.

9. Standards Compliance and Quality

Compliance

Recommendation: For definitive compliance information, contact Loongtion directly or refer to the latest official product datasheet.

Quality Assurance

The product undergoes rigorous inspection and testing, including:

• Appearance: Burr‑free housing, uniform coating, clear markings.
• Electrical performance: SMART information check, file system data read/write verification, normal temperature electrical performance test.
• Each drive is shipped with a test report and certificate of conformance.

Packaging and Delivery

• Packaged in anti‑static bags.
• Outer carton includes anti‑static foam, certificate of conformance, and corresponding test reports.
• Transportation may be via ordinary vehicles; protect from rain, snow, and corrosive substances.
• Storage conditions: 0 °C to 35 °C, RH ≤80 %, no strong magnetic fields, and not with acids/alkalis.

10. Ordering Information

Standard Industrial-Grade Part Numbers

Use handbook DRAM-less M.2 2280 codes above for published ordering. DRAM-cache configurations: contact engineering for the current orderable PN list.

Contact Information

• Company: Ningbo Loongtion Intelligent Technology Co., Ltd.
• Email: hi@loongtion.com
• Web: www.loongtion.com

11. About Loongtion

Ningbo Loongtion Intelligent Technology Co., Ltd. (Loongtion®) is a developer and supplier of China‑domestic memory and solid‑state storage products. The company’s portfolio includes:

• DDR3 / DDR4 / DDR5 / LPDDR4X SDRAM modules
• eMMC 5.1 embedded storage
• M.2 NVMe SSDs (including the product described in this whitepaper)
• NVMe BGA SSDs

Loongtion products are designed for industrial, embedded, medical, and commercial applications, offering customers reliable storage solutions with domestic supply‑chain assurance.

For further technical support, sales inquiries, or to request the latest official datasheet, please contact:

• Email: hi@loongtion.com
• Web: www.loongtion.com

Disclaimer: This whitepaper is based on the Loongtion consolidated technical fact sheet (Revision V1.1, 2024.02.01). Specifications, including but not limited to performance, power consumption, endurance, and physical dimensions, are subject to change without notice. Parameters not explicitly stated herein (e.g., random IOPS, latency, MTBF, data retention, shock/vibration ratings, regulatory certifications) are not provided in the source documentation and should be verified with the latest official product datasheet or by contacting Loongtion directly.