1. Executive Summary
The Loongtion M.2 2280 NVMe SSD with DRAM Cache is an industrial‑grade solid‑state drive designed for embedded, industrial, medical, and commercial computing applications. Built around a China‑domestic controller and Triple‑Level Cell (TLC) NAND flash, the drive complies with the NVMe 1.4 protocol and operates over a PCIe 3.0 x4 interface via a standard M.2 M‑Key connector.
Available in capacities from 1 TB to 8 TB, the drive delivers sequential read speeds of ≥2900 MB/s and sequential write speeds of ≥2600 MB/s (8 TB capacity, measured with CrystalDiskMark on Windows). Endurance is rated at up to 3200 TBW (8 TB) with 3000 P/E cycles, backed by a 5‑year warranty. The industrial‑grade variant supports an operating temperature range of –40 °C to +85 °C and a storage temperature range of –45 °C to +90 °C.
An onboard DRAM cache (approximately 1 GB per 1 TB of SSD capacity, sourced from Micron or ChangXin Memory Technologies (CXMT) depending on production batch) is included. The drive also supports TRIM, NCQ, S.M.A.R.T., ECC, wear leveling, and software‑triggered secure erase.
This whitepaper provides a detailed technical description, including architecture, electrical specifications, performance data, reliability metrics, system integration guidance, and ordering information. All data are derived from the Loongtion consolidated technical fact sheet (Revision V1.1, 2024.02.01). Specifications are subject to change; users should always refer to the latest official datasheet for complete and current information.
2. Product Overview
The Loongtion M.2 2280 NVMe SSD (DRAM Cache) is a solid‑state drive in the M.2 2280 form factor (22 mm × 80 mm, height ≤5 mm, weight <20 g). It connects to the host system through a standard M.2 M‑Key 75‑pin gold‑finger connector with 3 μin gold plating. The interface implements NVMe 1.4 over a PCIe 3.0 x4 bus.
Capacity Options
| Nominal Capacity | Formatted (Usable) Capacity |
|---|---|
| 1 TB | 953 GB |
| 2 TB | 1.86 TB |
| 4 TB | 3.64 TB |
| 8 TB | 7.44 TB |
Note: Tolerance between nominal and usable capacity: ±10 %.
Key Attributes
- Grade: Industrial (I)
- Controller: China‑domestic (specific model not specified in source documentation)
- NAND Flash: TLC (Triple‑Level Cell), 3000 P/E cycles
- DRAM Cache: Onboard, ~1 GB per 1 TB of SSD capacity; suppliers: Micron or CXMT depending on production batch
- Supported Features: TRIM, NCQ, S.M.A.R.T., ECC, wear leveling, software‑triggered secure erase (via pin 67), high‑reliability power management with short‑circuit and undervoltage protection
- Warranty: 5 years