1. Executive Summary
Ningbo Loongtion Intelligent Technology Co., Ltd. (Loongtion®) presents the Loongtion DDR3 SDRAM, a high-speed, JEDEC-compliant dynamic random-access memory component designed for demanding industrial, embedded, medical, and commercial applications. Built on a B-Die process, this memory device supports a wide range of speed bins from DDR3-800 to DDR3-2133, enabling system architects to select the optimal balance of performance and power consumption.
The Loongtion DDR3 SDRAM incorporates an 8-bank core architecture with 8n-bit prefetch, delivering burst-oriented read and write operations with data rates up to 2133 MT/s. The component is offered in both standard DDR3 (1.5 V nominal) and low-voltage DDR3L (1.35 V nominal) configurations, allowing seamless integration into power-sensitive designs. Available capacities of 2 Gb, 4 Gb, and 8 Gb with ×8 and ×16 data widths provide flexibility for a broad spectrum of memory subsystem requirements.
Key features include extended temperature ranges up to 105°C, comprehensive on-die termination (ODT) options including dynamic ODT, write leveling support for fly-by topology compensation, and self-calibration via an external ZQ resistor. These features, combined with robust DLL operation and multiple low-power modes, make the Loongtion DDR3 SDRAM a reliable choice for systems requiring domestically sourced memory with proven JEDEC compatibility.