Industrial DDR4 Memory Selection Guide

• JEDEC Compliant
• Industrial & Extended Temp
• −40°C to 85°C & −55°C to 105°C
• Up to 2133 MT/s

Ningbo Loongtion Intelligent Technology Co., Ltd.

hi@loongtion.com | www.loongtion.com

Document Version 2.2 | June 2026

1. Executive Summary

Ningbo Loongtion Intelligent Technology Co., Ltd. (Loongtion®) presents the Loongtion DDR3 SDRAM, a high-speed, JEDEC-compliant dynamic random-access memory component designed for demanding industrial, embedded, medical, and commercial applications. Built on a B-Die process, this memory device supports a wide range of speed bins from DDR3-800 to DDR3-2133, enabling system architects to select the optimal balance of performance and power consumption.

The Loongtion DDR3 SDRAM incorporates an 8-bank core architecture with 8n-bit prefetch, delivering burst-oriented read and write operations with data rates up to 2133 MT/s. The component is offered in both standard DDR3 (1.5 V nominal) and low-voltage DDR3L (1.35 V nominal) configurations, allowing seamless integration into power-sensitive designs. Available capacities of 2 Gb, 4 Gb, and 8 Gb with ×8 and ×16 data widths provide flexibility for a broad spectrum of memory subsystem requirements.

Key features include extended temperature ranges up to 105°C, comprehensive on-die termination (ODT) options including dynamic ODT, write leveling support for fly-by topology compensation, and self-calibration via an external ZQ resistor. These features, combined with robust DLL operation and multiple low-power modes, make the Loongtion DDR3 SDRAM a reliable choice for systems requiring domestically sourced memory with proven JEDEC compatibility.

2. Product Overview

The Loongtion DDR3 SDRAM is a high-speed DRAM component manufactured on B-Die technology. It is designed to meet JEDEC standards and is available in speed bins from DDR3-800 through DDR3-2133. The device supports both ×8 and ×16 data width configurations, packaged in a compact 96-ball Fine-Pitch Ball Grid Array (FBGA) that is RoHS compliant and lead-free.

The following part numbers are currently offered, covering industrial and extended temperature ranges:

*Note: Part numbers for ×8 configurations are not specified in source documentation.*

The supported speed bins include DDR3-800, DDR3-1066, DDR3(L)-1066, DDR3-1333, DDR3(L)-1333, DDR3(L)-1600, DDR3(L)-1866, and DDR3-2133. The "(L)" notation indicates devices validated for both DDR3 (1.5 V) and DDR3L (1.35 V) operation. The document revision history spans from Rev 1.0 (2022/05) to Rev 2.2 (2026/5).

3. Technology and Architecture

3.1 Core Architecture

The Loongtion DDR3 SDRAM employs an 8-bank DRAM core with an 8n-bit prefetch DDR architecture. A single read or write operation accesses an 8n-byte-wide data block, with data transferred in four clock cycles at the DRAM core and four clock cycles at the I/O pins. Read and write operations are burst-oriented, starting at a selected location and proceeding sequentially or interleaved as programmed.

3.2 Clock and Strobe Architecture

All control and address inputs are synchronized with a pair of external differential clocks (CK, CK#). Inputs are sampled at the crossing point of the differential clock—the rising edge of CK and the falling edge of CK#. All I/Os are synchronized in a source-synchronous manner using either a single-ended DQS signal or a differential DQS pair. The bidirectional differential data strobe (DQS, DQS#) aligns with data during reads (edge-aligned) and writes (center-aligned). An on-chip PLL ensures alignment between CK and the data signals DQ, DQS, and DQS#. The interface enables each I/O pin to transfer two words per clock cycle.

3.3 Command Protocol

All address and control input signals except data, data strobe, and data mask are latched on the rising edge of CK. The device supports a full command set including Activate, Precharge, Mode Register Set (MRS), Refresh, Self-Refresh Entry/Exit, ZQ Calibration (Long and Short), Reset, Multi-Purpose Register (MPR) access, and various Read and Write commands with burst length options (fixed BC4, fixed BL8, or on-the-fly).

3.4 DLL Operation

The Delay-Locked Loop (DLL) must be enabled for normal operation (MR1 bit A0 = 0). The DLL is automatically disabled during self-refresh and automatically re-enabled upon exit. After a DLL reset, the system must wait tDLLK clock cycles before issuing a read or synchronous ODT command. The DDR3 SDRAM does not require the DLL for any write operation except when RTT_WR is enabled and ODT operation requires DLL support. Two precharge power-down DLL modes are available: slow exit (freezes DLL to save power) and fast exit (keeps DLL active), selected via MR0 bit A12.

3.5 Mode Registers

Four programmable mode registers provide extensive configuration flexibility:

When programming mode registers, all address fields within the accessed mode register must be redefined, even if only a subset of MRS fields is being modified. Reserved for Future Use (RFU) bits must be programmed to 0.

3.6 Additive Latency

Additive latency (AL) allows a read or write command to be issued immediately after an activate command; the command is held internally for AL cycles before being issued. Read latency (RL) equals AL plus CAS latency (CL). Write latency (WL) equals AL plus CAS write latency (CWL). The DDR3 DRAM does not support half-clock latency.

3.7 Self-Calibration

The device performs self-calibration via the ZQ pin, which requires an external resistor RZQ = 240 Ω ± 1%. Two calibration commands are supported: ZQCL (long calibration) performs initial calibration during the power-up initialization sequence, and ZQCS (short calibration) performs periodic calibration to compensate for voltage and temperature variations. Before issuing ZQCL or ZQCS, all banks must be precharged and tRP timing satisfied. In systems with shared ZQ resistors, the controller must not allow overlap of tZQoper, tZQinit, or tZQCS timing between ranks.

4. Key Features and Differentiators

4.1 Wide Voltage and Speed Range

The Loongtion DDR3 SDRAM supports both DDR3 (VDD = VDDQ = 1.5 V nominal) and DDR3L (1.35 V nominal) operation on the same device, with VDD and VDDQ driven by a single power supply. A broad speed spectrum from 800 MT/s to 2133 MT/s enables designers to match performance requirements without over-provisioning.

4.2 Extended Temperature Operation

Two temperature grades are available:

• Industrial Temperature Range: −40°C to 85°C (part numbers with (0) suffix)
• Extended Temperature Range: −55°C to 105°C (part numbers without suffix)

IDD current derating guidelines ensure reliable operation at elevated temperatures: all IDD values must be increased by 30% when case temperature (Tc) exceeds 95°C, and by 50% when Tc exceeds 105°C. Self-refresh mode is not available above 105°C.

4.3 On-Die Termination (ODT)

The device provides comprehensive ODT support with both synchronous and dynamic modes:

• RTT_Nom: Programmable via MR1 bits A[9,6,2] to values of RZQ/4 (60 Ω), RZQ/2 (120 Ω), RZQ/6 (40 Ω), RZQ/12 (20 Ω), RZQ/8 (30 Ω), or disabled
• RTT_WR: Programmable via MR2 bits A[10,9] to RZQ/4 or RZQ/2, enabled in dynamic ODT mode
• ODT latencies: ODTLon = WL − 2; ODTLoff = WL − 2 (synchronous mode)

4.4 Write Leveling

To compensate for propagation time skew between the clock and data strobe caused by fly-by topology, the device supports a write leveling function. Write leveling mode is entered by setting MR1 bit 7 HIGH and exited by setting it LOW. During write leveling, DQS and DQS# terminations are enabled/disabled via the ODT pin, differing from normal operation.

4.5 TDQS (Termination Data Strobe)

For ×8 configurations, the TDQS feature provides additional termination resistor functionality. When TDQS is enabled, the DM function is not supported. In ×16 configurations, TDQS must be disabled via MR1 with A11 = 0.

4.6 Low-Power Modes

Multiple power-saving states are available:

• Precharge Power-Down: Slow exit (freezes DLL) or fast exit (DLL active)
• Active Power-Down
• Self-Refresh: Normal mode (IDD6 = 25 mA) and Extended Temperature mode (IDD6ET = 28 mA)

4.7 Multi-Purpose Register (MPR)

The MPR allows the system to read a predefined calibration pattern for timing training. When enabled via MR3 A2 = 1, all DQ pins output the same single-bit data in BL8 mode. The DLL must be locked before an MPR read operation.

5. Technical Specifications

5.1 Package Dimensions (96-ball FBGA)

5.2 Supply Voltages

• VDD and VDDQ must be within 300 mV of each other at all times.
• Under all conditions, VDDQ must be less than or equal to VDD.
• When both VDD and VDDQ are less than 500 mV, Vref must be no greater than 0.6 × VDDQ.
• Vref = VDDQ/2.
• VTT is limited to a maximum of 0.95 V after power supply voltage ramp-up is complete.
• Power supply ramp time between 300 mV and minimum VDD must be within 200 ms.

5.3 Absolute Maximum Ratings

5.4 Thermal Characteristics

5.5 IDD Current Specifications (×8 Configuration)

5.6 IDD Current Specifications (×16 Configuration)

5.7 Capacitance Parameters

*Capacitance measured per JEP147 with VDD = VDDQ = 1.5 V, VBIAS = VDD/2, on-die termination disabled. Maximum external load capacitance on ZQ pin: 5 pF.*

5.8 Speed Bin Timing Parameters

• tRAS max = 9 × tREFI for all speed bins.
• tAA max = 20 ns for all speed bins.
• Supported CL values: 5, 6, 7, 8, 9, 10, 11, 12, 13, 14.
• Supported CWL values: 5, 6, 7, 8, 9, 10, 11, 12.

5.9 REF Command to ACT or REF Command Time (tRFC)

5.10 CAS Write Latency (CWL) Timing Ranges

6. Performance and Reliability

6.1 Speed Grade Summary

6.2 Lower Frequency Support and Down Binning

Each speed grade supports functional operation at lower frequencies. When the DRAM data rate is lower than 800 MT/s, DDR3-800 AC timing applies. For devices supporting optional down bin configurations (e.g., to CL=7 or CL=9), tAAmin, tRCDmin, and tRPmin must be 13.125 ns, and the Serial Presence Detect (SPD) must be programmed accordingly.

6.3 Burst Performance

Burst read and write operations support lengths of 4 or 8 (fixed or on-the-fly selectable) in sequential or interleaved modes. Burst operations cannot be terminated or interrupted once initiated.

6.4 Refresh and Self-Refresh

The device supports normal self-refresh (IDD6 = 25 mA across all speed grades) and extended temperature self-refresh (IDD6ET = 28 mA). When the case temperature exceeds 105°C, refresh is required; self-refresh mode is not available under these conditions. IDD temperature derating is mandatory: all IDD values must be increased by 30% when Tc > 95°C and by 50% when Tc > 105°C.

6.5 Calibration and DLL Reliability

Initial ZQ calibration (ZQCL) ensures output driver and ODT accuracy. Periodic ZQCS commands compensate for voltage and temperature drift. The DLL must be locked before read operations or synchronous ODT commands, with tDLLK wait time enforced after DLL reset.

7. Applications and Target Markets

The Loongtion DDR3 SDRAM is designed for a wide variety of systems requiring reliable, domestically sourced memory with industrial-grade robustness.

8. System Integration and Design Considerations

8.1 Fly-By Topology and Write Leveling

The DDR3 SDRAM uses a fly-by topology for command, address, control signals, and clocks. To compensate for propagation time skew between the clock and data strobe that results from this topology, the system must enable write leveling (MR1 bit 7 = 1). During write leveling, only DQS and DQS# terminations are controlled via the ODT pin, which differs from normal operation.

8.2 ODT Configuration Guidelines

• ODT input signals are in a don't-care state during tIS cycles until CKE is registered HIGH.
• When CKE is HIGH, ODT signals can be statically held HIGH or LOW. If RTT_NOM is enabled, ODT must be held LOW.
• During read operations, ODT must be disabled externally.
• Dynamic ODT mode is enabled via MR2 bits A9 or A10. In this mode, RTT_Nom is selected during operations without a write command; when a write command is registered, after ODTLcnw clock cycles, RTT_WR is selected.
• ODT is not available during DLL Off mode or self-refresh mode.

8.3 Power Sequencing

• VDD and VDDQ must ramp from 300 mV to minimum operating voltage within 200 ms.
• During ramp: VDD > VDDQ and (VDD − VDDQ) < 0.3 V.
• After ramp completion, VTT is limited to a maximum of 0.95 V.
• Voltage levels on all pins except VDD, VDDQ, VSS, and VSSQ must be ≤ VDD and VDDQ, and ≥ VSS and VSSQ.

8.4 ZQ Resistor Routing

The ZQ pin requires an external 240 Ω ± 1% resistor. In multi-rank systems with a shared ZQ resistor, the controller must ensure that tZQoper, tZQinit, and tZQCS timing intervals do not overlap between ranks.

8.5 CKE and Self-Refresh

CKE must be registered with the same value on consecutive positive clock edges for tCKEmin. Self-refresh exit is asynchronous; Vref (VrefDQ and VrefCA) must be maintained during self-refresh. Input clock frequency can be changed only in self-refresh mode or precharge power-down mode.

8.6 DLL and Frequency Changes

Any frequency change must be performed while in self-refresh or precharge power-down. During a frequency change in precharge power-down, ODT and CKE must remain stable low. After exiting precharge power-down, the DLL must be reset via an MRS command.

8.7 Mode Register Programming

When programming any mode register, all address fields within the accessed mode register must be redefined, even if only a subset of MRS fields is being modified. RFU bits must be programmed to 0.

8.8 Drive Strength Selection

The output driver impedance is defined by the external reference resistor RZQ (240 Ω ± 1%). Two settings are available: R (nominal 34.4 Ω ± 10%) and R (nominal 40 Ω). Mismatch between pull-up and pull-down at VOMdc = 0.5 × VDDQ is within −10% to +10%.

8.9 Capacitance and Loading Considerations

The capacitance values provided in Section 5.7 should be used for signal integrity analysis. The maximum external load capacitance on the ZQ pin is 5 pF.

9. Standards Compliance and Quality

The Loongtion DDR3 SDRAM is designed and manufactured in accordance with JEDEC standards. Key compliance characteristics include:

• JEDEC Standard Package: 96-ball FBGA (Fine-Pitch Ball Grid Array) per JEDEC specification.
• RoHS Compliance: The device is lead-free and RoHS compliant.
• Temperature Grades: Industrial (−40°C to 85°C) and extended (−55°C to 105°C) as specified in part numbers.
• Absolute Maximum Ratings: Storage temperature −55°C to 100°C; maximum junction temperature 125°C.
• ZQ Calibration: Uses external 240 Ω ± 1% resistor per JEDEC.
• Signal Integrity: DC and AC input levels, differential crosspoint voltages, and output levels meet JEDEC requirements for all supported speed grades.
• Documentation: Datasheet revisions include Rev 1.0 (2022/05) through Rev 2.2 (2026/5).

Quality assurance measures include characterization and design verification for lower-frequency operation across all speed grades, as well as mandatory IDD derating guidelines for operation above 95°C.

10. Ordering Information

The following part numbers are available for the Loongtion DDR3 SDRAM:

Temperature Suffix: Part numbers with "(0)" indicate the industrial temperature range (−40°C to 85°C). Part numbers without "(0)" indicate the extended temperature range (−55°C to 105°C).

*Note: Additional part numbers for ×8 configurations are not specified in source documentation.*

11. About Loongtion

Ningbo Loongtion Intelligent Technology Co., Ltd. (Loongtion®) is a China-based developer and supplier of memory and solid-state storage products for industrial, embedded, medical, and commercial applications. The company's product portfolio includes:

• DDR3 / DDR4 / DDR5 SDRAM – Memory components for diverse computing platforms.
• LPDDR4X SDRAM – Low-power memory for mobile and embedded systems.
• eMMC 5.1 – Embedded multimedia card storage.
• M.2 NVMe SSD – High-performance solid-state drives.
• NVMe BGA SSD – Compact ball-grid-array solid-state storage solutions.

Loongtion focuses on providing domestically sourced memory and storage solutions that meet the rigorous demands of industrial and embedded environments. The company offers comprehensive technical support and long-term product availability.

Contact Information:

• Email: hi@loongtion.com
• Website: www.loongtion.com

Disclaimer: The specifications, features, and parameters included in this whitepaper are based solely on the consolidated fact sheet provided. For complete design-in information, refer to the latest official Loongtion datasheet. Specifications are subject to change without notice. Ningbo Loongtion Intelligent Technology Co., Ltd. assumes no liability for errors or omissions.